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 HVM27WK
Variable Capacitance Diode for FM tuner
REJ03G0101-0400Z (Previous: ADE-208-060C) Rev.4.00 Sep.29.2003
Features
* High capacitance ratio to wide tuning band width. (C1/C8 = 1.8 min) * Low series resistance. * MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HVM27WK Laser Mark T5 Package Code MPAK
Pin Arrangement
3
2 (Top View)
1
1. Anode 2. Anode 3. Cathode
Rev.4.00, Sep.29.2003, page 1 of 4
HVM27WK
Absolute Maximum Ratings *1
(Ta = 25C)
Item Reverse voltage Junction temperature Storage temperature Note: 1. Per one device. Symbol VR Tj Tstg Value 20 125 -55 to +125 Unit V C C
Electrical Characteristics *3
(Ta = 25C)
Item Reverse voltage Reverse current Capacitance Symbol VR IR C1 C2 C8 Capacitance ratio n1 n2 Series resistance Matching error rs C/C *
1
Min 20 52.0 43.0 24.0 1.8 1.7
Typ --
Max -- 50 62.0 48.1 28.0 0.4 3.0
Unit V nA pF
Test Condition IR = 10 A VR = 15 V VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz
%
C1/C8 C2/C8 VR = 2 V, f = 100 MHz VR = 1 to 8 V, f = 1 MHz
Notes: 1. A set of HVM27WK is of uniform C-V characteristics. Measure max. value and min. value of capacitance at each bias point of VR = 1 V through 8 V. Calculate Matching Error, (Cmax - Cmin) C/C = x 100 (%) Cmin 2. Each group shall uniform a multiple of 4 diodes. 3. Per one device.
Rev.4.00, Sep.29.2003, page 2 of 4
HVM27WK
Main Characteristic
10-6 10-7
Reverse current IR (A)
10-8 10-9 10-10 10-11 10-12 10-13
0
10 20 Reverse voltage VR (V)
30
Fig.1 Reverse current vs. Reverse voltage 80 f = 1MHz
60
Capacitance C (pF)
40
20
0 0.5
1.0
10
30
Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage
Rev.4.00, Sep.29.2003, page 3 of 4
HVM27WK
Package Dimensions
As of January, 2003
Unit: mm
(0.65)
0.10 3-0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
(0.95) (0.95) 1.9 0.2
0.3 2.8 + 0.1 -
(0.3)
+ 0.2 1.1 - 0.1
(0.65)
2.8
Package Code JEDEC JEITA Mass (reference value)
MPAK -- Conforms 0.011 g
Rev.4.00, Sep.29.2003, page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
(c) 2003. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 1.0


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